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We present the pressure dependence of the defect emissions in the chalcopyrite alloy semiconductor AgxCu1—xGaS2 for values of the alloy concentration x varying between 0 and 1. A large variation in the pressure coefficients of the different defect emissions with x was found. In one alloy concentration x = 0.25 deep levels were found to appear under pressure. Plausible explanations of our results have been proposed.
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Choi et al. (2001) studied this question.
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