Investigation of oxidation mechanism of SiC single crystal for plasma electrochemical oxidation

and SiC. Based on the analysis of the cross section image of the oxidized layer, electrolyte-SiC interface chemical reaction and oxidation layer formation mechanism are illustrated to explain the oxidation mechanism. Silicon dioxide growth process model is proposed and illustrated that the phrase of protuberances growth change from charge transfer to diffusion. The present work offers an alternative approach to modify SiC surface, and provides a reference for chemical and mechanical synergetic effect applied in CMP.