Lead zirconate titanate (PZT) thin films were prepared by reactive coevaporation with high-concentration ozone. PZT thin films that demonstrate the highest charge storage density (280 fC/μm2 at 1.5 V for 75-nm-thick film) yet reported have been fabricated. No fatigue was observed after 1011 polarization switching cycles even though a Pt electrode is used. A low leakage current of <10−7 A/cm2 at 1.5 V was attained. These PZT films are promising candidates of an alternative capacitor dielectric for dynamic random access memory (DRAM) and ferroelectric nonvolatile memories.
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Torii et al. (1997) studied this question.
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