Andreev-like Reflection in the Pfaffian Fractional Quantum Hall Effect

We studied the tunnel transport between the edge of a Pfaffian fractional quantum Hall state and that of an integer quantum Hall state. Based on the duality argument between the strong and weak tunnelings, we found that an Andreev-like reflection appeared in the strong tunneling regime. We calculated the charge conductance in the weak and strong tunneling regimes for the low-voltage limit. In the weak tunneling limit, dI/dV was proportional to V1/ν with bias voltage V and ν=1/2. By contrast, in the strong tunneling limit, $dI/dV$ was expressed by (e²/h)2ν/(1+ν) with a correction term. We expect that this condition can be realized experimentally at the point contact between a fractional quantum Hall state with ν=5/2 and an integer quantum Hall state with ν=3.