Tin sulfide (SnS) films were grown by sulfurization using an inexpensive Sn sheet and S powder. The Sn sheet was sulfurized in a closed ampoule at a low temperature between 150 and 300 °C. The resulting sulfurized films had a flat surface and large grains, and exhibited adhered very well to the substrate. These samples exhibited X-ray diffraction peaks corresponding to SnS and contained no extra phases. These results represent the first step toward realizing an optical device such as a solar cell using a SnS film grown by a sulfurization method.
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Sugiyama et al. (2008) studied this question.
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