Lateral β-Ga2O3 MOSFETs With High Power Figure of Merit of 277 MW/cm2

In this work, we have demonstrated highperformance lateral β-Ga2O3metal-oxide-semiconductor field-effect transistors (MOSFETs) with state-of-art power figure-of-merit (P-FOM) and breakdown voltage (BV) by adopting a T-shape gate field-plate and source connected field-plate structures. Depletion-mode (D-mode) β-Ga2O3MOSFETs with gate-to-drain distance (LGD) of 4.8 μm/17.8 μm demonstrate a BV of 1.4 kV/2.9 kV and specific ON-resistance (RON,sp) of 7.08 mΩ·cm2 /46.2 mΩ·cm2, respectively, yielding a high P-FOM of 277 MW/cm2and averaged electrical field of 2.9 MV/cm for the device with LGD = 4.8 μm. To the best of all the authors' knowledge, this P-FOM of 277 MW/cm2and BV = 2.9 kV are the highest values among all the lateral D-mode β-Ga2O3MOSFETs. Combined with negligible gate pulsed and drain pulsed current collapse and drain current on/off ratio of 109, these β-Ga2O3MOSFETs show a great potential for future power electronic applications.