In this paper, a general model of the buried double-junction (BDJ) photodetector is proposed for DC, AC, and noise analysis. In conjunction with the analytical expressions of photo-generated and dark currents, this model can be applied to all BDJ operating modes. Moreover, it can be easily extended to any multilayer PN junction device. The experimental results obtained for various devices realized using the 0.35-μm CMOS technology show good agreement with the simulation and allow the determination of key model parameters.
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Feruglio et al. (2005) studied this question.
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