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Trap states induced by reactive ion etching in AlGaN/GaN high-electron-mobility transistors* , Luo, Jun, Zhao, Sheng-Lei, Mi, Min-Han, Hou, Bin, Yang, Xiao-Lei, Zhang, Jin-Cheng, Ma, Xiao-Hua, Hao, Yue
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Luo et al. (2015) studied this question.
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