Effect of channel doping concentration and thickness on device performance for In0.53Ga0.47As metal-oxide-semiconductor transistors with atomic-layer-deposited Al2O3 dielectrics

We have investigated the channel doping concentration and channel thickness dependence of device performance for In0.53Ga0.47As metal-oxide-semiconductor transistors with atomic layer deposited Al2O3 dielectrics. We found that undoped channel provides the highest drive current of 125 mA/mm for 5 μm gate length. With proper substrate doping concentration (5×1016/cm3), reasonable subthreshold swing (104 mV/decade) can be achieved for 4.7 nm equivalent oxide thickness. Thinner InGaAs channel exhibits lowest off-current density of 4.0×10−6 mA/mm.