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Effects of electron trapping and interface state generation on bias stress induced in indium–gallium–zinc oxide thin-film transistors, Han, Chang-Hoon, Kim, Sang-Sub, Kim, Kwang-Ryul, Baek, Do-Hyun, Kim, Sang-Soo, Choi, Byoung-Deog
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Han et al. (2014) studied this question.
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