The diffusion of 68 Ge in single crystals of high-purity (over 99.99% pure) Ni has been measured using the sectioning technique. The plot of log D versus 1/T is straight from 939 to 1675K, over 6 1 / 2 orders of magnitude in D, with parameters D 0 =2.10+or-0.47 cm 2 s -1 , Q=2.74+or-0.03 eV (264+or-3 kJ mol -1 ). The data suggest a low Ge-vacancy binding enthalpy for Ni.
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Mantl et al. (1983) studied this question.
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