The DC and microwave performance of modulation doped GaInAs/InP HFETs (heterostructure FET), grown by atmospheric pressure organometallic vapour phase epitaxy is reported. An extrinsic transconductance of 300 mS/mm and a best value of the cutoff frequency, Fr = 14.1 GHz in a 1.5 μm gate device was measured at room temperature. Improved performance of the Schottky gate device is obtained using an Au gate on the InP/GaInAs heterostructure layers. A low access resistance of 3 Ωmm is obtained using a self-aligned technique with high conductivity n+-GaInAs top layers. ty n+-GaInAs top layers.
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Shahar et al. (1988) studied this question.