Characterization of GaN-Based Light Emitting Diodes Grown on 4-in. Si(111) Substrate

GaN-based light emitting diodes (LEDs) with a total thickness of 4.8 µm have been grown by metal–organic chemical vapor deposition on 4-in. Si(111) substrate. The structural property has been revealed by the measurements of high-resolution X-ray diffraction, scanning electron microscopy and transmission electron microscopy. It can be clarified that the LEDs in sample have the good interfaces and layer periodicities for the strained-layer superlattices and multiple quantum wells. In addition, the optical property in the light output power has been evaluated. As a result, LEDs with a maximum output power of 3.3 mW and a high saturation operating current of 400 mA have exhibited the good device performance.