SIMS depth profiling of Si/SiO 2 /Si layers by using self‐sputtered Ga + from a gallium liquid metal ion source

SIMS depth profiles of Si/SiO 2 /Si systems have been carried out using a Ga + primary beam tracing the Ga + yield. This ion is found to be a good marker for thin oxide layers at an Si/Si interface. In the case of thicker (7–85 nm) buried SiO 2 layers, various peaks are observed for Ga + yield. The influence of primary beam energy on the observed profiles has been investigated. A qualitative model is proposed that explains the observed profiles in terms of phenomena, such as radiation‐induced segregation, occurring in the same depth range of the cascade collision.