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A heterojunction photodiode was fabricated by forming two contact regions on a glass substrate: one side was a cast film of perovskite-type niobate [(CH 3 ) 3 NHSr 2 Nb 3 O 10 ] as a n-type photosemiconductor and the other side a cast film of Zn-saponite (Na 0.96 [Si 7.18 Al 0.64 ]Zn 6.20 O 20 (OH) 2 ) as a p-type semiconductor under oxygen atmosphere. Diode-type current–voltage characteristics were obtained under the illumination of light (340 nm) and oxygen atmosphere (1 atm) at 25–100 °C. The interfacial structure was studied by means of focused ion-beam and transmission electron microscopy techniques, confirming the contact of the two different nanosheets on a nanometer scale. The results are discussed on the basis of the nanosheet band structures.
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Sato et al. (2008) studied this question.
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