Flash memories are the most important among modern nonvolatile memory technologies. We are showing new results on the threshold voltage shifts in Flash memory arrays after /sup 60/Co irradiation. A (relatively) high total dose, exceeding 100 krad (SiO/sub 2/), is needed to induce errors in the array, but threshold voltage shifts are all but negligible even at lower doses. These shifts can be accurately described by using a model which considers the charges generated by irradiation in all the oxides surrounding the floating gate. We are also showing that cycling (endurance) and total ionizing dose effects mutually add.
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Cellere et al. (2004) studied this question.
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