A Design of Active Gate Driver for Reducing Surge Voltage During Turn-Off Transient of SiC MOSFET in Boost Converter

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This paper proposes an Active Gate Driver (AGD) for a DC–DC boost converter based on Silicon Carbide (SiC) power devices, in which surge voltage and ringing arise from their fast-switching characteristics. In this work, a practical and simple 4-bit logic AGD was proposed to adjust the gate resistance during the Miller interval of the SiC MOSFET. This helps suppress these effects and lowers the surge voltage and ringing stress on the power device. Experimental results demonstrate that the voltage overshoot decreases from 52 V to 22 V, corresponding to a reduction from 52% to 22% under a 100 V output condition, while the peak drain–source voltage decreases from 152 V to 122 V. The turn-off energy increases from 60.2 µJ to 76.9 µJ due to the slightly reduced switching speed. This trade-off represents the improvement in the comparison between transient suppression and switching loss. In addition, the voltage ringing is significantly attenuated. Although the modified switching strategy slightly increases switching loss, it effectively improves waveform quality and reduces voltage stress. These results confirm that the proposed AGD provides a simple and effective solution for improving the switching robustness and reliability of SiC-based DC–DC boost converters.