Reliability Evaluation of Al 2 O 3 Deposited by Ozone-Based Atomic Layer Deposition on Dry-Etched n-Type GaN

The time-to-breakdown ( t BD ) of Al 2 O 3 deposited by ozone-based atomic layer deposition (ALD) on dry-etched n-type GaN was evaluated by constant-voltage-stress time-dependent dielectric breakdown (TDDB) measurements. The influence of dry etching was not observed in the TDDB and current–voltage ( I – V ) measurements at room temperature. The t BD of the ALD-Al 2 O 3 film was estimated to be more than 40,000 years at 3 MV/cm and room temperature. However, the t BD estimated at 250 °C was around 10 2 –10 3 s.