3.6 µm GaSb-based type-I lasers with quinternary barriers, operating at room temperature

Extension of the room-temperature operation wavelength of GaSb-based type-I laser diodes up to 3.6 µm is presented. Episide-up mounted ridge waveguide lasers with five compressively strained quantum-wells exhibit lasing in pulsed operation with a threshold current densitiy of 862 A/cm2 at infinite resonator length at 15°C and 20 mW of average output power per facet.