Mid-IR (λ≈3–3.5 μm) light emitting diodes with quinternary AlInGaAsSb barriers and InGaAsSb strained quantum wells grown on GaSb substrates have been demonstrated. The devices produced a quasi-cw emission power of 0.7 mW at room temperature and 2.5 mW at T=80 K.
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Suchalkin et al. (2008) studied this question.
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