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A new type of dissociated misfit dislocation in [001] ZnTe/GaAs strained-layer heterostructures was studied using high-resolution electron microscopy. These dislocations can relieve the localized misfit strain, since they belong to either dissociated screw dislocations and/or partial dislocation dipoles. Their generation depends upon a localized negative strain.
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Jin Zou (1998) studied this question.
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