Nondestructive readout mode static induction transistor (SIT) photo sensors

The nondestructive readout (NDRO) performance of two static induction transistor (SIT) photosensors, a 40*40 pixel area array and a 140-b linear array, is examined. NDRO operation in the SIT sensors is demonstrated by imaging with the area array and by examining the output waveform of the linear array. The charge lost per NDRO cycle in the linear array was 0.014% near the saturation signal level, and no charge loss could be detected at the>