Highly uniform thin-films of zinc-indium-tin oxide (ZITO) semiconductors were formed using solution process with wet-annealing at a low temperature of 250 °C. The solution-processed ZITO thin-film transistors with a top-gate staggered structure were fabricated to exhibit field-effect mobility of 2.04 ± 0.28 cm2/Vs at saturation region, threshold voltage (Vth) of 2.15 ± 0.75 V, subthreshold slope of 0.27 ± 0.14 V/dec. and excellent reliability (ΔVth = −4.35 V) for negative bias temperature illumination stress. Based on the performance, a 10.1 in. full-color liquid crystal display was demonstrated by the optimized full photolithography process.
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Kim et al. (2013) studied this question.
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