Lattice site investigation of F in preamorphized Si

The lattice location of F atoms in Si was experimentally studied. Si single crystals were amorphized, implanted with F, and afterwards the amorphous layer was recrystallized. Some of the samples prepared in this way were also annealed at 7500.2em0ex^∘C for 600.3em0exmin. The ¹⁹F(p,αγ)¹⁶O resonant nuclear reaction at 340.50.3em0exkeV was employed to measure the probability of a close encounter between protons and F nuclei as a function of the incident angle with respect to six major crystalline directions. The predictions of several ab initio calculations proved to be incompatible with the present experimental findings.