Deep levels in high-energy proton-irradiated tin-doped n-type Czochralski silicon

A deep level transient spectroscopy study of defects created by 61 MeV proton irradiation of tin-doped n-type Czochralski silicon is reported. A comparison is made with the deep levels observed in irradiated p–n junction diodes fabricated in n-type float-zone silicon, without tin doping. The main conclusions are that in Sn-doped material, at least two additional deep radiation centers are introduced at 0.29±0.01 and 0.61±0.02 eV below the conduction band. From annealing experiments, it is concluded that these electron traps dissociate below 120 °C, which is lower than observed before for Sn–V related levels. It is demonstrated that the introduction rates of the well-known radiation defects are significantly smaller in Sn-doped material.