Effect of high energy (15 MeV) proton irradiation on vertical power 4H-SiC MOSFETs

The effect of irradiation with 15 MeV protons on the electrical properties of high-power vertical 4H-SiC MOSFETs of 1.2 kV class has been studied experimentally with doses in the range 0 ≤ Φ ≤ 10 14 cm −2 . Dose Φ cr , signifying the complete degradation of the device, corresponds to the condition Φ cr ≈ n 0 / η e ( η e is the electron removal rate and n 0 is the electron concentration in the unirradiated drift layer). In the devices under study, Φ cr is 10 14 cm −2 . The effect of irradiation on the leakage current, gate-drain capacitance, transconductance, and field mobility was examined.