Surface chemical ordering of group III elements in the ternary alloy InₓGa_1-xAs, stabilizing the 2×3 reconstruction at the surface composition In0.67Ga0.33As, is demonstrated on the basis of x-ray diffraction data. An incommensurate 2×n reconstruction is observed for lower In surface concentrations, achieved by burying an InAs monolayer under a number of GaAs layers and letting the In surface segregation process operate. A quantitative account of the intensity measured in the incommensurate phase is obtained by using a probabilistic distribution of Ga- and In-rich structural elements.
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Sauvage-Simkin et al. (1995) studied this question.
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