The dry etching characteristics of , , and in or high density discharges were examined over the substrate temperature range −30 to +60°C. Sidewall etching is suppressed at temperatures of ≤ 20°C and the vertical etch rates of all three materials decrease by factors of two or more in the range from 0 to −30°C. Condensation of etchant and product species occurs at −30°C in both and discharges, leading to rough surface morphologies. Use of a bottom collimating magnet on the electron cyclotron resonance source produces faster etch rates at room temperature, but has little effect at −30°C because of the condensation problem.
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Pearton et al. (1994) studied this question.