Integration of two-dimensional magnets in magnetic tunnel junctions: prospects and challenges

Magnetic memory technology continues to drive progress in non-volatile data storage, offering significant advantages in data retention and operational endurance. As a key component in memory architectures, the magnetic tunnel junction (MTJ) plays a central role in the development of modern spintronics by leveraging its bistable resistance states. The emergence of two-dimensional (2D) magnetic materials has further accelerated the advancement of high-performance MTJs, capitalizing on their exceptional magnetic properties and ideal van der Waals interfaces. This review begins by introducing 2D magnetic materials with diverse properties, encompassing both layered and non-layered structures. It then summarizes novel magnetic tunnel junctions engineered from these 2D materials. Next, the review outlines recent applications and progress in theoretical calculations pertinent to 2D magnetic tunnel junctions. Finally, it discusses future opportunities for employing 2D magnetic materials in the design of innovative MTJs for next-generation high-performance electronics.