Surface characterization study reveals step generation probability and free energy on silicon (110) surfaces, highlighting nanoscale thermodynamic stability.
Scanning tunneling microscopy (STM) and reflection high-energy electron diffraction (RHEED) are used to estimate the generation probability of the (17, 15, 1)2×1 step and the domain size of the “16×2” structure at room temperature. From both studies, the area size of the “16×2” structure along the <111> direction is deduced to be about 50 nm. Therefore, the generation probability of the (17, 15, 1)2×1 step is estimated to be 0.1–0.2. From the estimated values, the free energy increase per unit length of the (17, 15, 1)2×1 step δF is estimated to about 1.8×10-13 (J/m).
No takes yet. Share an insight, caveat, or question.
Youiti Yamamoto (1998) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: