High-Performance Silicon Nanowire Gate-All-Around nMOSFETs Fabricated on Bulk Substrate Using CMOS-Compatible Process

In this letter, a novel self-aligned CMOS-compatible method for the fabrication of gate-all-around silicon nanowire MOSFETs (GAA SNWFETs) on bulk substrate has been proposed. The fabricated SNWFET featuring 33-nm gate length and 7-nm diameter shows the highest driving current (Ion= 2500 μA/μm atVds=Vgs= 1.0 V) among previously reported data and achieves highIon/Ioffratio of 105, lightening the promise for high performance and strong scalability of GAA SNWFETs. The process details and optimization procedure are extensively discussed.