P-type conductivity in cubic GaMnN layers grown by molecular beam epitaxy

Cubic (zinc-blende) Ga 1− x Mn x N layers were grown by plasma-assisted molecular beam epitaxy on GaAs (001) substrates. Some of the structures also contained cubic AlN buffer layers. Auger electron spectroscopy and secondary ion mass spectroscopy studies clearly confirmed the incorporation of Mn into cubic GaN, the Mn being uniformly distributed through the layer. X-ray diffraction studies demonstrated that the Mn-doped GaN films are cubic and do not show phase separation up to a Mn concentration of x < 0.1. p-type conductivity for the cubic Ga 1− x Mn x N layers was observed for a wide range of the Mn doping levels. The measured hole concentration at room temperature depends nonlinearly on the Mn incorporation and varies from 3 × 10 16 to 5 × 10 18 cm −3 .