Electron transfer reactions occurring at n‐GaP (111) and (100) electrodes have been investigated in acetonitrile solutions. In the presence of strongly oxidising cations, such as 10‐methylphenothiazine (10‐MP +· ), Ferrocene (Cp 2 Fe + ) and tetrathiafulvalen (TTF +· ), it is shown that electron transfer proceeds directly from the conduction band to cations adsorbed at the semiconductor surface. Differential capacitance and photo/dark‐current measurements have been used to identify a considerable positive shift of the flatband potential ( U FB ) in the presence of the oxidising cation. This phenomenon is absent in the presence of a similarly oxidising neutral species. No evidence was obtained to support the model which proposes mediated electron transfer via surface states deep in the band gap.
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McIntyre et al. (1984) studied this question.
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