Experimental results are presented for the formation of TiSi2 in the presence of an ultrathin Mo layer deposited either at the interface between Ti and Si or on top of Ti/Si. The formation of C54 TiSi2 is clearly shown to be enhanced with a surface Mo layer, although the effect is less pronounced as compared to the use of an interposed Mo layer. The results can be accounted for with a template mechanism where the formation of C40 (Mo, Ti)Si2 is crucial for the epitaxial growth of C54 TiSi2 atop. Possible grain-size effects on the formation of C54 TiSi2 are also discussed.
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Zhang et al. (2000) studied this question.
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