Lower-temperature plasma etching of Cu films using infrared radiation

The etching of Cu films is achieved at lower temperature (150 °C) with Cl2 plasma by IR light radiation. Anisotropic fine Cu patterns are obtained. The etch rate is 4000 Å/min and there are no microloading effects. It is considered that the etching temperature lowering and the anisotropy are realized by the IR light enhancement of CuClx desorption.