p-n junctions from sputtered Ge25Se75−xBix films

The preparation and study of p-n junctions from amorphous chalcogenide GeSe3 sputtered films doped with Bi are presented. The p-type layer is Ge25.2Se68.3Bi6.5 and the n-type layer is Ge23.9Se65.8Bi10.3. The I-V characteristic in the dark exhibits a ‘‘relaxation case’’ behavior that is expected for low-conductivity amorphous semiconductors. J-V characteristics under illumination and the spectral response of the open circuit voltage Voc were also measured. The reverse current under illumination shows no saturation with voltage, while the Voc saturates at high light intensities.