Answers are grounded in this paper and cite their sources.
Current oscillations in the positive resistance region of the forward characteristics of Co-doped Si p-i-n devices are described. The oscillations are sinusoidal, independent of device length, and are strongly affected by optical excitation and deep-level trap properties.
No takes yet. Share an insight, caveat, or question.
Streetman et al. (1967) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: