Molecular Beam Epitaxy of CuGaSe 2 on GaAs Substrate Using Metalorganic Copper and Gallium Precursors

The metalorganic molecular beam epitaxial growth of CuGaSe2 layers on a GaAs(100) substrate has been performed at 600°C using cyclopentadienylcoppertriethylphosphine (CpCuTEP), triethylgallium (TEGa) and selenium as source precursors. The CuGaSe2/GaAs layers have been grown under the systematically changing TEGa partial pressure. X-ray diffraction, photoluminescence (PL) and photoreflectance measurements have been carried out for the layers, and the CuGaSe2 layer grown under the optimum condition exhibited an exciton emission in the PL spectrum.