Temperature dependence of minority hole mobility in heavily doped silicon

Temperature dependence of the minority hole mobility μp(ND,T) in heavily doped n+ silicon in the doping range from 1018 to 2.4×1019 cm−3 was investigated. The preliminary measurements show that the mobility is strongly temperature dependent. For temperatures below 200 K the minority-carrier hole mobility increases with increasing doping, in contrast to the opposite dependence for the majority hole mobility in p+ silicon. Analytical fits to the measured data useful for low-temperature modeling for bipolar devices are given.