The gas‐sensing properties of spinodally decomposed (Ti,Sn)O 2 thin films on sapphire substrates were investigated for CO, C 3 H 8 , and C 2 H 5 OH, and hydrogen gases at a temperature of 500°C. The variation in the d ‐spacing of the (101) plane of (Ti 0.5 Sn 0.5 )O 2 films showed behavior that was typical of spinodal decomposition during annealing at a temperature of 900°C. Transmission electron micrographs of the spinodally decomposed (Ti,Sn)O 2 films on sapphire (0112) substrates revealed the characteristic modulated structure. The modulated lamella microstructure consisted of TiO 2 ‐ and SnO 2 ‐rich regions at intervals of ∼10 nm. The films were very sensitive to hydrogen gas and revealed anisotropic electrical conduction that was influenced by the modulated microstructure, which is characteristic of spinodal decomposition.
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Arakawa et al. (1999) studied this question.
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