A 0.13 μm SiGe BiCMOS Technology Featuring fT/fₘₐₓ of 240/330 GHz and Gate Delays Below 3 ps

A 0.13 μm SiGe BiCMOS technology for millimeter-wave applications is presented. This technology features high-speed HBTs with peak transit frequenciesfTof 240 GHz, maximum oscillation frequenciesfmaxof 330 GHz, and breakdown voltages BVCEOof 1.7 V along with high-voltage HBTs (fT= 50 GHz,fmax= 130 GHz, BVCEO= 3.7 V) integrated in a dual gate oxide RF-CMOS process. Ring oscillator gate delays of 2.9 ps, low-noise amplifiers for 122 GHz, andLCoscillators with fundamental-mode oscillation frequencies above 200 GHz are demonstrated.