The facet degradation of InGaAs/GaAs/AlGaAs ridge waveguide (RW) laser diodes was suppressed by replacing the AlGaAs waveguide layers with a InGaP lattice matched to GaAs. The long-term behaviour of such laser diodes was tested at 40°C and 100 mW emission power over 1000 h, showing degradation rates of between 1.3 × 10-5/h and 3.6 × 10-5/h without any visible facet damage.
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Erbert et al. (1997) studied this question.
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