Various defect sites on SiO 2 thin films on Mo(112) have been characterized with metastable impact electron spectroscopy (MIES), and the interaction between deposited Ag and these defects sites investigated with MIES/ultraviolet photoelectron spectroscopy (UPS). MIES/UPS data for low- and high-defect SiO 2 surfaces acquired as a function of Ag exposure are consistent with two-dimensional Ag growth at low coverage and three-dimensional growth at higher Ag coverages. With increasing defect density on the SiO 2 surfaces, no significant change is observed in the behavior of the work function with respect to the Ag coverage, suggesting that the interaction between Ag and SiO 2 is not influenced markedly by the presence of defects. This result is consistent with recent theoretical results that indicate a strong covalent bond between an overlayer metal and defect sites of SiO 2 .
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Kim et al. (2003) studied this question.
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