Thin-film NiO Al2O3 reaction couples prepared by CVD

Summary A CVD technique for preparing thin-film reaction couples for examination in the TEM has been described. Epitactic relations between NiO, NiAl 2 O 4 and Al 2 O 3 have been studied with this technique. Preferred growth directions in the NiAl 2 O 4 reaction layer have been determined and defects associated with the phase transformation have also been monitored.