Close-packed gold-nanocrystal assemblies are selectively deposited into trenches (300 nm × 300 nm) fabricated by electron-beam lithography. The base of the trenches consists of highly doped silicon with 30 nm silica walls. The assemblies are formed using electric-field mediated deposition of8 nm gold spheres from organic solvents.
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Ahmed et al. (2008) studied this question.
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