Interface properties in fluorinated (100) and (111)Si/SiO2 MOSFETs

The incorporation of fluorine in the gate oxide is shown to reduce interface defect density in (100) and (111) Si MOSFETs, leading to increased carrier mobility and reduced 1/f noise. The resulting low densities of interface traps and oxide charge have made it possible to study more clearly the effect of the orientation-dependent electron and hole effective masses on carrier mobility.