Highly Transparent InGaZnO[sub 4] Thin Film Transistors Using Indium-Doped ZnO Electrodes on Plastic Substrate

We investigated indium- (In)-doping effects on the structural and electrical properties of a ZnO film. It was found that structural properties degraded as In-doping content increased, whereas electrical properties improved. We fabricated fully transparent and flexible In Ga Zn O 4 thin film transistors (TFTs) using In-doped ZnO electrodes on polyethylene terephthalate (PET) substrate. The In Ga Zn O 4 ∕ Mg O ‐ Ba 0.6 Sr 0.4 TiO 3 ∕ 3 % In-doped ZnO∕PET stacks exhibited a high transmittance of 80% in the visible range. The In Ga Zn O 4 TFT with a 3% In-doped ZnO electrode showed a high field effect mobility of 1.04 cm 2 ∕ V s and a moderate on∕off ratio of 7.48 × 10 5 .