Expanding electrical communication systems demand new acoustic wave devices that can be used in high frequency ranges. The solidly mounted piezoelectric thin film resonator is a candidate for such devices. In this study, first, acoustic properties of a number of thin films are evaluated and a combination of SiO 2 and ZnO is shown to be suitable for such devices as quarter-wave multilayer materials. Then, piezoelectric thin film resonators consisting of a ZnO piezoelectric film on alternately deposited SiO 2 and ZnO quarter-wave multilayers are designed and fabricated. Their measured characteristics are presented and discussed.
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Kobayashi et al. (2002) studied this question.
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