Changing the Absorber Layer with a Compound FeSi2 to Improve the Efficiency of the Solar Cell using a Simulation Program

This research examines the electrical and optical features of AZO/ZnO/CdS/CIGS solar cell by altering the concentration and thickness of the absorption layer to optimize efficiency.Structural and electrical qualities may be essential in the emerging domains of the optoelectronics industry, where cell efficiency has been achieved.Efficiency = 10.2%,Fill Factor = 68.38%,Short-Circuit Current Density = 34.53mA/cm 2 , Open-Circuit Voltage = 424.2mV.The cell efficiency was enhanced following the modification of the layer concentration.Copper Indium Gallium Selenide Efficiency = 18.2%,Fill Factor = 81.57%,Short-Circuit Current Density = 32.42mA/cm 2 , Open-Circuit Voltage = 688.3mV.The efficiency of the solar cell has been seen to grow to 25.7% upon substituting the absorption layer with the combination FeSi2.