We examined the magnetic properties of CoFeB/MgO/CoFeB based magnetic tunnel junctions (MTJs) with L12(ordered)-Mn3Ir or gamma(disordered)-Mn75Ir25as an antiferromagnetic (AFM) layer. Both of them showed tunnel magnetoresistance (TMR) ratio of about 160% after 350degC annealing. The exchange bias field (Hex) of the MTJs with L12-Mn3Iris significantly larger than that with gamma-MnIr. The blocking temperature (TB) of the MTJ film with L12-Mn3Ir is about 50degC higher than that with gamma-MnIr. These results prove that L12-Mn3Ir is a great candidate as AFM in MgO-barrier-MTJs and makes them improve in exchange bias properties.
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Komagaki et al. (2007) studied this question.
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